當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BSM100GB120DN2
IGBT 模(mu)塊(kuai) 1200V 100A DUAL
BSM15GD120DN2E3224
IGBT 模(mu)塊(kuai) N-CH 1.2KV 25A
BSC019N02KS G
MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
BSC097N06NSTATMA1
MOSFET DIFFERENTIATED MOSFETS
BSP612PH6327XTSA1
MOSFET
BSL207N H6327
MOSFET SMALL SIGNAL+P-CH
BSL305SPEH6327XTSA1
BSL207NH6327XTSA1
BFP843FH6327XTSA1
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTORS
BSL316C H6327
BSS315PH6327XT
MOSFET P-Ch -30V -1.5A SOT-23-3
BSS340NWH6327XTSA1
BSS84P H6433
MOSFET P-Ch -60V -170mA SOT-23-3
BF886H6327XTSA1
BFP 720FESD H6327
BFP 196W H6327
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTOR
BFP196WH6327XTSA1
BFR380FH6327XTSA1
BSO033N03MSGXUMA1
MOSFET N-Ch 30V 22A DSO-8 OptiMOS 3M
BSO130P03S H
MOSFET P-Ch -30V -11.3A DSO-8 OptiMOS P
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