當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BFP 740FESD H6327
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BI
BFR193E6327HTSA1
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) NPN RF Transistor 12V 80mA 580mW
BSD223PH6327XTSA1
MOSFET P-Ch DPAK-2
BSD840NH6327XTSA1
MOSFET N-Ch 20V 880mA SOT-363-6
BSS119N H6327
MOSFET N-Ch 100V 190mA SOT-23-3
BSS119NH6327XTSA1
BSS126H6327XTSA2
MOSFET N-Ch 600V 21mA SOT-23-3
BFR 193F H6327
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTOR
BSS139H6327XTSA1
MOSFET N-Ch 250V 30mA SOT-23-3
BSS316N H6327
MOSFET N-Ch 30V 1.4A SOT-23-3
BSS806NH6327XTSA1
MOSFET N-Ch 20V 2.3A SOT-23-3
BSS205NH6327XTSA1
MOSFET N-Ch 20V 2.5A SOT-23-3
BSS205N H6327
BSS670S2L H6327
MOSFET N-Ch 55V 540mA SOT-23-3
BSS670S2LH6327XTSA1
BSS215PH6327XTSA1
MOSFET P-Ch -20V -1.5A SOT-23-3
BSD235NH6327XTSA1
MOSFET N-Ch 20V 950mA SOT-363-6
BSD314SPEH6327XTSA1
MOSFET P-Ch 30V -1.5A SOT-363-3
BFP 520 H6327
BFP 640FESD H6327
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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