當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPB019N08N3GATMA1
MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
IPL65R099C7
MOSFET HIGH POWER BEST IN CLASS
IGW25N120H3XK
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IPB032N10N5ATMA1
MOSFET DIFFERENTIATED MOSFETS
IPL60R104C7AUMA1
MOSFET HIGH POWER_NEW
IRFSL3107PBF
MOSFET MOSFT 75V 230A 3mOhm 160nC
IPA60R099C7XKSA1
IKW50N65H5FKSA1
IPB024N10N5ATMA1
IPB06P001LATMA1
MOSFET
IPB65R150CFDAATMA1
MOSFET N-Ch 650V 72A D2PAK-2
IPP50R140CP
MOSFET N-Ch 500V 23A TO220-3 CoolMOS CP
IPT029N08N5ATMA1
MOSFET MV POWER MOS
IPI100N12S305AKSA1
MOSFET N-CHANNEL 100+
IPI111N15N3 G
MOSFET N-Ch 150V 83A I2PAK-3 OptiMOS 3
IPL65R165CFDAUMA1
MOSFET HIGH POWER_LEGACY
IPB65R190CFDA
MOSFET N-Ch 650V 57.2A D2PAK-2
IPA65R150CFD
MOSFET N-Ch 700V 22.4A TO220FP-3
IPW65R190CFDFKSA2
MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
IPL65R210CFDAUMA1
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