當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPW60R041C6
MOSFET N-Ch 650V 77.5A TO247-3 CoolMOS C6
IRFBA90N20DPBF
MOSFET MOSFT 200V 98A 23mOhm 160nC
IPW60R099P6XKSA1
MOSFET HIGH POWER PRICE/PERFORM
IHW30N135R3FKSA1
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IPW60R099C7XKSA1
MOSFET HIGH POWER_NEW
IGZ50N65H5XKSA1
IPW60R120C7XKSA1
IHW20N120R3
IGBT 晶(jing)體(ti)管(guan) IH SeriesRev Conduct IGBT Monolithic Body
IAUS165N08S5N029ATMA1
MOSFET
IPW60R145CFD7XKSA1
IPP60R170CFD7XKSA1
IRFBA1405PPBF
MOSFET MOSFT 55V 174A 5mOhm 170nC
IPI120N10S405AKSA1
MOSFET N-CHANNEL 100+
IPB65R310CFDAATMA1
MOSFET N-Ch 650V 11.4A D2PAK-2
IPI032N06N3GAKSA1
MOSFET N-Ch 60V 120A I2PAK-3 OptiMOS 3
IPA65R280E6
MOSFET N-Ch 700V 13.8A TO220FP-3 CoolMOS E6
IPA65R225C7XKSA1
MOSFET HIGH POWER BEST IN CLASS
IPP50R250CPXKSA1
MOSFET N-Ch 550V 13A TO220-3
IPA50R250CP
MOSFET N-Ch 500V 13A TO220FP-3 CoolMOS CP
IGP20N60H3
IGBT 晶(jing)體(ti)管(guan) IGBT 600V
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