當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPW60R075CP
MOSFET N-Ch 600V 39A TO247-3 CoolMOS CP
IPB60R099CPATMA1
MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP
IRG4PC50FPBF
IGBT 晶(jing)體(ti)管(guan) 600V Fast 1-8kHz
IPP60R125CP
MOSFET N-Ch 600V 25A TO220-3 CoolMOS CP
IPW60R160C6FKSA1
MOSFET N-Ch 600V 23.8A TO247-3 CoolMOS C6
IPW60R160C6
IRG4BC40SPBF
IGBT 晶(jing)體(ti)管(guan) 600V DC-1 KHZ (STD) DISCRETE IGBT
IRFB4110GPBF
MOSFET MOSFT 100V 180A 4.5mOhm 150nC
IPP100N10S3-05
MOSFET N-Ch 100V 100A TO220-3 OptiMOS-T
IRGB10B60KDPBF
IGBT 晶(jing)體(ti)管(guan) 600V UltraFast 10-30kHz
IRFB3206GPBF
MOSFET MOSFT 60V 210A 3mOhm 120nC
IPB65R225C7ATMA1
MOSFET N-Ch 700V 41A D2PAK-2
IRFB3306GPBF
MOSFET MOSFT 60V 160A 4.2mOhm 85nC
IRF540NSTRRPBF
MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC
IPD60R950C6ATMA1
MOSFET N-Ch 650V 4.4A DPAK-2
IPB70N10SL-16
MOSFET N-Ch 100V 70A D2PAK-2 SIPMOS
IPD50N04S3-08
MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T
IRG4PSH71KDPBF
IGBT 晶(jing)體(ti)管(guan) 1200V UltraFast 4-20kHz
IRG4PH40UPBF
IGBT 晶(jing)體(ti)管(guan) 1200V UltraFast 5-40kHz
IRG4PC40WPBF
IGBT 晶(jing)體(ti)管(guan) 600V Warp 60-150kHz
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