當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IRG4PH50UDPBF
IGBT 晶(jing)體(ti)管(guan) 1200V ULTRAFAST 5-40 KHZ COPACK IGBT
IPP60R099CP
MOSFET N-Ch 650V 31A TO220-3 CoolMOS CP
IPB60R099C6
MOSFET N-Ch 650V 38A D2PAK-2 CoolMOS C6
IRG4PC30UDPBF
IGBT 晶(jing)體(ti)管(guan) 600V ULTRAFAST 8-60 KHZ COPACK IGBT
IPP60R190C6
MOSFET N-Ch 650V 20.2A TO220-3 CoolMOS C6
IPD640N06L G
MOSFET N-Ch 60V 18A DPAK-2
IRG4PH40KDPBF
IGBT 晶(jing)體(ti)管(guan) 1200V ULTRAFAST 4-20 KHZ COPACK IGBT
IRG4PC50SPBF
IGBT 晶(jing)體(ti)管(guan) 600V DC-1 KHZ (STD) DISCRETE IGBT
IRG4PH50UPBF
IGBT 晶(jing)體(ti)管(guan) 1200V ULTRAFAST 5-40KHZ DSCRETE IGBT
IRG4PC40KDPBF
IGBT 晶(jing)體(ti)管(guan) 600V ULTRAFAST 8-25 KHZ COPACK IGBT
IRGIB15B60KD1P
IGBT 晶(jing)體(ti)管(guan) 600V Low-Vceon
IRG4PC50WPBF
IGBT 晶(jing)體(ti)管(guan) 600V Warp 60-150kHz
IPD60R385CPATMA1
MOSFET N-Ch 600V 9A DPAK-2
IRGPS46160DPBF
IGBT 晶(jing)體(ti)管(guan) 600V TRENCH IGBT ULTRAFAST
IPW60R041P6
MOSFET HIGH POWER PRICE/PERFORM
IPW60R040CFD7XKSA1
MOSFET HIGH POWER_NEW
IPP65R045C7
MOSFET N-Ch 650V 46A TO220-3 CoolMOS C7
IPP65R045C7XKSA1
IKFW90N60EH3XKSA1
IGBT 晶(jing)體(ti)管(guan) High speed hard switching 600 V, 90 A third generation TRENCHSTOP IGBT3 co-packed with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation package for a best cost efficient solution.
IPW65R045C7FKSA1
MOSFET N-Ch 650V 46A TO247-3 CoolMOS C7
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