當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IKW30N65WR5XKSA1
IGBT 晶(jing)體(ti)管(guan) The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance techno
IHW30N65R5XKSA1
IGBT 晶(jing)體(ti)管(guan) Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC
IPW60R180C7XKSA1
MOSFET HIGH POWER_NEW
IPA60R180C7XKSA1
IPP65R225C7XKSA1
MOSFET N-Ch 650V 11A TO220-3
IPA80R1K0CEXKSA2
MOSFET CONSUMER
IPA80R1K4CEXKSA2
IPP80R1K4P7XKSA1
MOSFET
IPS65R400CEAKMA1
IPA65R1K0CEXKSA1
IPS80R1K4P7AKMA1
IPD80R1K4P7ATMA1
IPZ40N04S5L4R8ATMA1
MOSFET N-CHANNEL_30/40V
IRF40R207
MOSFET TRENCH_MOSFETS
IPU80R4K5P7AKMA1
IPD70R2K0CEAUMA1
IPN50R800CEATMA1
IPN65R1K5CEATMA1
IPD50R950CEAUMA1
IPN50R2K0CEATMA1
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