當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPB77N06S212ATMA2
MOSFET N-CHANNEL_55/60V
IPP80N06S2L09AKSA2
IPI45N06S4L08AKSA3
MOSFET
IPW60R060C7XKSA1
MOSFET HIGH POWER_NEW
IKW75N65EH5XKSA1
IGBT 晶(jing)體(ti)管(guan) Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e
IRFP4127PBF
MOSFET TRENCH_MOSFETS
IKW40N60DTPXKSA1
IGBT 晶(jing)體(ti)管(guan) The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior.
IPA65R125C7XKSA1
MOSFET HIGH POWER BEST IN CLASS
IGW40N60TPXKSA1
IHW15N120E1XKSA1
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IPB065N10N3GATMA1
MOSFET MV POWER MOS
IPA80R650CEXKSA2
MOSFET CONSUMER
IRF100B202
IPAW60R280CEXKSA1
IPB80N06S209ATMA2
IPD60R600E6ATMA1
IPAW60R380CEXKSA1
IPD80R4K5P7ATMA1
IPB80N06S2LH5ATMA4
IPB100N06S205ATMA4
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