當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BUZ30A H
MOSFET N-Ch 200V 21A TO220FP-3
BUZ30AHXKSA1
BSM50GAL120DN2
IGBT 模(mu)塊(kuai) 1200V 50A CHOPPER
BF999E6327HTSA1
射(she)頻(pin)金(jin)屬(zhu)氧(yang)化(hua)物(wu)半(ban)導(dao)體(ti)場(chang)效(xiao)應(ying)(RF MOSFET)晶(jing)體(ti)管(guan) Silicon N-Channel MOSFET Triode
BF998E6327HTSA1
射(she)頻(pin)金(jin)屬(zhu)氧(yang)化(hua)物(wu)半(ban)導(dao)體(ti)場(chang)效(xiao)應(ying)(RF MOSFET)晶(jing)體(ti)管(guan) N-CH 12 V 30 mA
BF 998 E6327
BSM75GD120DLC
IGBT 模(mu)塊(kuai) N-CH 1.2KV 125A
BSM200GA170DLC
IGBT 模(mu)塊(kuai) N-CH 1.7KV 400A
BSM200GA120DN2
IGBT 模(mu)塊(kuai) 1200V 200A SINGLE
BSM100GB120DLCK
IGBT 模(mu)塊(kuai) 1200V 100A DUAL
BSM10GP120
IGBT 模(mu)塊(kuai) 1200V 10A PIM
BUZ30AH3045AATMA1
MOSFET N-Ch 200V 21A D2PAK-2
BUZ30A H3045A
BF2040E6814HTSA1
射(she)頻(pin)金(jin)屬(zhu)氧(yang)化(hua)物(wu)半(ban)導(dao)體(ti)場(chang)效(xiao)應(ying)(RF MOSFET)晶(jing)體(ti)管(guan) Silicon N-Channel MOSFET Tetrode 5V
BC 850CW H6327
雙極(ji)晶(jing)體(ti)管(guan) - 雙極(ji)結型(xing)晶(jing)體(ti)管(guan)(BJT) AF TRANSISTOR
BSM200GB60DLC
IGBT 模(mu)塊(kuai) 600V 200A DUAL
BSM75GAL120DN2
IGBT 模(mu)塊(kuai) 1200V 75A CHOPPER
BSC079N10NS G
MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2
BSC130P03LS G
MOSFET P-Ch -30V -22.5A TDSON-8 OptiMOS P
BSC105N10LSF G
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
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