當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BSC22DN20NS3 G
MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3
BSC034N03LS G
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
BSP171P H6327
MOSFET P-Ch -60V 1.9A SOT-223-3
BSZ120P03NS3 G
MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
BSZ180P03NS3EGATMA1
MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3
BSS169 H6906
MOSFET N-Ch 100V 90mA SOT-23-3
BSS314PE H6327
MOSFET P-Ch -30V -1.5A SOT-23-3
BSS314PEH6327XT
BSR315PH6327XTSA1
MOSFET SMALL SIGNAL+P-CH
BFR380L3E6327XTMA1
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) NPN Silicon RF TRANSISTOR
BSS816NW H6327
MOSFET N-Ch 20V 1.4A SOT-323-3
BSS806NH6327XT
MOSFET N-Ch 20V 2.3A SOT-23-3
BSC026N08NS5ATMA1
MOSFET N-Ch 80V 100A TDSON-8
BSC017N04NS G
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSP135H6906XTSA1
MOSFET N-Ch 600V 20mA SOT-223-3
BSC039N06NS
MOSFET N-Ch 60V 100A TDSON-8
BSC009NE2LSATMA1
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC039N06NSATMA1
BSC014N03MS G
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
BSZ018NE2LSI
MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan):隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan):隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)(製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo))為(wei)主(zhu)要(yao)客(ke)戶(hu)
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