當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BFR843EL3E6327XTSA1
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTORS
BTS282ZE3180AATMA2
MOSFET N-Ch 49V 36A D2PAK-6
BFP740FH6327XTSA1
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) RF BIP TRANSISTOR
BFP 740F H6327
BFR 380F H6327
BFR 92P E6327
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) TRANS GP BJT NPN 15V 0.045A
BFR 193 E6327
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) NPN RF Transistor 12V 80mA 580mW
BFP 420 H6327
BSC036NE7NS3 G
MOSFET N-Ch 75V 100A TDSON-8
BSB008NE2LX
MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS
BSC014N04LS
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
BSF134N10NJ3 G
MOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3
BSC070N10NS3 G
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
BSO201SP H
MOSFET P-Ch -20V -14.9A DSO-8 OptiMOS P
BSZ019N03LS
MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
BSC750N10ND G
MOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2
BSC026N02KS G
MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
BSC0924NDI
MOSFET N-Ch 30V,30V 40A,40A TISON-8
BSZ900N15NS3 G
MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3
BSZ42DN25NS3 G
MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3
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