當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
BSC0901NS
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
BSC265N10LSF G
MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
BSZ040N04LS G
MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3
BSC0902NS
BSO613SPV G
MOSFET P-Ch -60V -3.44A DSO-8
BSC150N03LD G
MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3
BSF030NE2LQ
MOSFET N-Ch 25V 75A CanPAK-2 SQ OptiMOS
BSZ100N06LS3 G
MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
BSC0925ND
MOSFET N-Ch 30V 40A TISON-8
BSC024NE2LS
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSZ440N10NS3 G
MOSFET N-Ch 100V 18A TSDSON-8 OptiMOS 3
BFR 740L3RH E6327
射(she)頻(pin)(RF)雙(shuang)極(ji)晶(jing)體(ti)管(guan) NPN Silicn Germanium RF Transistor
BSC883N03LS G
MOSFET N-Ch 34V 98A TDSON-8
BSZ058N03LS G
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
BSC097N06NS
MOSFET N-Ch 60V 46A TDSON-8
BSZ036NE2LS
MOSFET N-Ch 25V 40A TDSON-8 OptiMOS
BSC050N03LSGXT
MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
BSZ050N03LS G
BSZ100N03MS G
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
BSC090N03MS G
MOSFET N-Ch 30V 48A TDSON-8 OptiMOS 3M
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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