當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPW60R024P7XKSA1
MOSFET
IRF40H233XTMA1
IPB017N06N3GXT
MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
IPLK70R600P7ATMA1
IPLK80R1K4P7ATMA1
IPLK70R750P7ATMA1
IPLK80R2K0P7ATMA1
IPD65R420CFDATMA2
MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
IPLK70R900P7ATMA1
IPLK70R1K2P7ATMA1
IPLK70R1K4P7ATMA1
IPLK70R2K0P7ATMA1
IPD65R660CFDATMA2
IPD06P003NATMA1
IPA65R110CFDXKSA2
IPP65R110CFDXKSA2
IFF600B12ME4S8PB11BOSA1
IGBT 模塊 Description:
IPP041N12N3GXK
MOSFET N-Ch 120V 120A TO220-3 OptiMOS 3
IPZA60R045P7XKSA1
IPW60R045P7XKSA1
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
友(you)情(qing)鏈(lian)接(jie)
深(shen)圳(zhen)市(shi)宏(hong)欣(xin)微(wei)電(dian)子(zi)科(ke)技(ji)有(you)限(xian)公(gong)司(si)
原(yuan)廠(han)原(yuan)裝(zhuang)正(zheng)品(pin)，備(bei)大(dai)量(liang)庫(ku)存(cun)
7X24小(xiao)時(shi)詢(xun)價(jia)熱(re)線(xian)
0755-82572287
粵(yue)ICP備(bei)2022064169號(hao)