當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IGZ100N65H5XKSA1
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IKW75N60H3FKSA1
IRFP4137PBF
MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-247AC
IKW15T120
IGBT 晶(jing)體(ti)管(guan) LOW LOSS DuoPack 1200V 15A
IGW50N60TFKSA1
IGBT 晶(jing)體(ti)管(guan) LOW LOSS IGBT TECH 600V 50A
IPB038N12N3GATMA1
MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
IGW25T120
IGBT 晶(jing)體(ti)管(guan) LOW LOSS IGBT TECH 1200V 50A
IKW30N65EL5XKSA1
IGBT 晶(jing)體(ti)管(guan) 650V IGBT Trenchstop 5
IGW25N120H3
IPB027N10N3GATMA1
MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
IGB50N60T
IKW50N65F5FKSA1
IPW65R190CFDAFKSA1
MOSFET N-Ch 650V 17.5A TO247-3
IKW30N60TFKSA1
IGBT 晶(jing)體(ti)管(guan) LOW LOSS DuoPack 600V 30A
IRLS4030TRL7PP
MOSFET MOSFT 100V 190A 3.9mOhm 93nC-7
IPW65R125C7XKSA1
MOSFET HIGH POWER_NEW
IHW20N135R3
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS TrenchStop
IKW40N65H5FKSA1
IHW25N120R2
IGBT 晶(jing)體(ti)管(guan) REVERSE CONDUCT IGBT 1200V 25A
IPW60R125P6XKSA1
MOSFET HIGH POWER PRICE/PERFORM
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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