當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IGP15N60T
IGBT 晶(jing)體(ti)管(guan) LOW LOSS IGBT TECH 600V 15A
IPB80P04P405ATMA1
MOSFET P-Ch -40V -80A D2PAK-2 OptiMOS-P2
IPA057N08N3 G
MOSFET N-Ch 80V 60A TO220FP-3 OptiMOS 3
IPI60R380C6
MOSFET N-Ch 650V 10.6A I2PAK-3 CoolMOS C6
IRFH5006TRPBF
MOSFET 60V 1 N-CH HEXFET 4.1mOhms 67nC
IKP06N60TXKSA1
IGBT 晶(jing)體(ti)管(guan) LOW LOSS DuoPack 600V 6A
IRFI4510GPBF
MOSFET MOSFET, 100V, 30A, 1 TO-220 Fullpack
IRFS4510TRLPBF
MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC
IPP057N08N3GXKSA1
MOSFET N-Ch 80V 80A TO220-3 OptiMOS 3
IPI80N06S407AKSA2
MOSFET MOSFET
IPP17N25S3100AKSA1
MOSFET N-Ch 250V 17A TO220-3
IRFP250MPBF
MOSFET MOSFT 200V 30A 75mOhm 82nCAC
IPP50R190CE
MOSFET N-Ch 500V 18.5A TO220-3
IPP040N06NAKSA1
MOSFET N-Ch 60V 80A TO220-3
IPP50R190CEXKSA1
IPI80N06S4L07AKSA2
IRF1404PBF
MOSFET 40V 202A 4mOhm 160nC
IPP040N06N
IPP12CN10L G
MOSFET N-Ch 100V 69A TO220-3 OptiMOS 2
IPD60R380C6ATMA1
MOSFET N-Ch 600V 10.6A DPAK-2
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