當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IAUS300N08S5N012ATMA1
MOSFET
IPW65R150CFDAFKSA1
MOSFET N-Ch 650V 22.4A TO247-3
IHW30N135R3
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS TrenchStop RC
IPW60R099P7XKSA1
MOSFET HIGH POWER_NEW
IPW65R190CFDA
MOSFET N-Ch 650V 17.5A TO247-3
IKW50N65ES5
IGBT 晶(jing)體(ti)管(guan) Trenchstop 5 IGBT
IKW30N60H3
IGBT 晶(jing)體(ti)管(guan) 600V 30A 187W
IPP60R125P6
MOSFET HIGH POWER PRICE/PERFORM
IHW20N135R5
IPB035N08N3 G
MOSFET N-Ch 80V 100A D2PAK-2 OptiMOS 3
IPP60R160P6
MOSFET HIGH POWER_LEGACY
IPD60R145CFD7ATMA1
IPL60R185P7AUMA1
IPP65R190C7
IPI120N08S404AKSA1
MOSFET N-CHANNEL 75/80V
IPD65R190C7
IPB600N25N3 G
MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3
IAUC120N04S6L008ATMA1
MOSFET OptiMOS - power MOSFET for automotive applications
IPB039N10N3 G
MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3
IPA80R360P7XKSA1
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan):隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan):隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)(製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo))為(wei)主(zhu)要(yao)客(ke)戶(hu)
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