當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPT65R033G7XTMA1
MOSFET
IPB044N15N5ATMA1
IPD80R450P7ATMA1
IPB048N15N5LFATMA1
IPZA60R060P7XKSA1
MOSFET HIGH POWER_NEW
IKZ50N65ES5XKSA1
IGBT 晶(jing)體(ti)管(guan) To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control l
IPL60R105P7AUMA1
IPZA60R120P7XKSA1
IPW60R125CFD7XKSA1
IPB60R120P7ATMA1
IPW60R170CFD7XKSA1
IPDD60R190G7XTMA1
IPW80R360P7XKSA1
IPA60R280CFD7XKSA1
MOSFET LOW POWER_NEW
IPL60R365P7AUMA1
IPAN80R450P7XKSA1
IPA60R280P7XKSA1
IKA15N65ET6XKSA2
IGBT 晶(jing)體(ti)管(guan) Discrete 650 V TRENCHSTOP IGBT6 with soft, fast recovery anti-parallel Rapid diode
IKA10N65ET6XKSA2
IPA60R180P7SXKSA1
MOSFET CONSUMER
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