當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPSA70R750P7SAKMA1
MOSFET CONSUMER
IPN70R750P7SATMA1
IPS70R900P7SAKMA1
MOSFET
IPSA70R1K4P7SAKMA1
IPSA70R900P7SAKMA1
IPN70R900P7SATMA1
IGB50N65S5ATMA1
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IFF600B12ME4PB11BPSA1
IGBT 模(mu)塊(kuai)
IPC90N04S5L3R3ATMA1
MOSFET MOSFET_(20V,40V)
IKFW60N60EH3XKSA1
IGBT 晶(jing)體(ti)管(guan) High speed hard switching 600 V, 60 A third generation TRENCHSTOP IGBT3 co-packed with Rapid 1 fast and soft antiparallel diode in a TO-247 advanced isolation.
IRF100P218XKMA1
MOSFET TRENCH_MOSFETS
IPW60R120P7XKSA1
MOSFET HIGH POWER_NEW
IPAN70R600P7SXKSA1
IPN60R360P7SATMA1
IKY75N120CH3XKSA1
IGBT 晶(jing)體(ti)管(guan)
IKY40N120CH3XKSA1
IPDD60R050G7XTMA1
IKZ75N65ES5XKSA1
IGBT 晶(jing)體(ti)管(guan) To further enhance the best-in-class performance of the TRENCHSTOP 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control l
IKFW50N60ETXKSA1
IGBT 晶(jing)體(ti)管(guan) Infineon's 600 V, 50 A hard-switching TRENCHSTOP IGBT3 copacked with full-rated free-wheeling diode in a TO247 advanced isolation package.
IKFW50N60DH3XKSA1
IGBT 晶(jing)體(ti)管(guan) INDUSTRY 14
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