當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPW60R055CFD7XKSA1
MOSFET HIGH POWER_NEW
IPL60R060CFD7AUMA1
IRG7PH35UD-EP
IGBT 晶(jing)體(ti)管(guan) IGBT DISCRETES
IPP220N25NFD
MOSFET N-Ch 250V 61A TO220-3
IPB017N10N5ATMA1
MOSFET N-Ch 100V 180A D2PAK-2
IRGP4062DPBF
IGBT 晶(jing)體(ti)管(guan) 600V UltraFast Trench IGBT
IRGP4640DPBF
IGBT 晶(jing)體(ti)管(guan) 600V UltraFast IGBT 40A 250W 75nC
IRFB4137PBF
MOSFET 300V, 40A, 69 mOhm 83 nC Qg, TO-220AB
IPB117N20NFDATMA1
MOSFET N-Ch 200V 84A D2PAK-2
IPP65R095C7XKSA1
IKW15N120H3FKSA1
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
IKW15N120H3
IPP60R099C7XKSA1
IPB90R340C3ATMA1
MOSFET N-Ch 900V 15A D2PAK-2
IKW50N65ES5XKSA1
IGBT 晶(jing)體(ti)管(guan) TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
IGW50N60TPXKSA1
IGBT 晶(jing)體(ti)管(guan) The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior.
IKW40N65F5FKSA1
IGW40N60H3
IGBT 晶(jing)體(ti)管(guan) 600V 40A 306W
IPP60R099P7XKSA1
IGW15N120H3
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