當(dang)前(qian)位(wei)置(zhi): 電(dian)子(zi)元(yuan)器(qi)件(jian)配(pei)單(shan) >> 相(xiang)關(guan)型(xing)號(hao)
IPD30N06S4L23ATMA2
MOSFET MOSFET
IRFHS9351TRPBF
MOSFET DUAL -30V P-CH 20V VGS MAX
IPN70R1K0CEATMA1
MOSFET
IPN60R1K0CEATMA1
MOSFET CONSUMER
IPN50R650CEATMA1
IPD70R1K4CEAUMA1
IPD70R1K4P7SAUMA1
IPSA70R1K2P7SAKMA1
IPSA70R2K0P7SAKMA1
IPN60R1K5CEATMA1
IPN50R950CEATMA1
IRLML2502TRPBF
MOSFET MOSFT 20V 4.2A 45mOhm 8nC Log Lvl
IRLR8726TRPBF
MOSFET 30V 1 N-CH HEXFET 5.8mOhms 15nC
IPB80N08S2-07
MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS
IKW40N65WR5XKSA1
IGBT 晶(jing)體(ti)管(guan) The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance techno
IKW50N65EH5XKSA1
IGBT 晶(jing)體(ti)管(guan) Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e
IPW90R120C3
MOSFET N-Ch 900V 36A TO247-3 CoolMOS C3
IPW65R080CFDFKSA1
MOSFET N-Ch 650V 43.3A TO247-3 CoolMOS CFD2
IPA65R065C7
MOSFET HIGH POWER BEST IN CLASS
IGW40N120H3
IGBT 晶(jing)體(ti)管(guan) IGBT PRODUCTS
原(yuan)廠(han)芯(xin)片(pian)長(zhang)期(qi)訂(ding)單(shan)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)優(you)勢(shi)貨(huo)源(yuan)：隨(sui)時(shi)現(xian)貨(huo)+極(ji)具(ju)競(jing)爭(zheng)力(li)的(di)價(jia)格(ge) 是(shi)以(yi)終(zhong)端(duan)使(shi)用(yong)（製(zhi)造(zao)工(gong)廠(han)、大(dai)專(zhuan)院(yuan)校(jiao)、研(yan)究(jiu)院(yuan)所(suo)）為(wei)主(zhu)要(yao)客(ke)戶(hu)
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